? semiconductor components industries, llc, 2009 april, 2009 ? rev. 6 1 publication order number: mjf44h11/d mjf44h11 (npn), mjf45h11 (pnp) preferred devices complementary power transistors for isolated package applications complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. features ? low collector ? emitter saturation voltage ? v ce(sat) = 1.0 v (max) @ 8.0 a ? fast switching speeds ? complementary pairs simplifies designs ? pb ? free packages are available* maximum ratings rating symbol value unit collector ? emitter voltage v ceo 80 vdc emitter ? base voltage v eb 5 vdc collector current ? continuous ? peak i c 10 20 adc total power dissipation @ t c = 25 c derate above 25 c p d 36 0.288 w w/ c total power dissipation @ t a = 25 c derate above 25 c p d 2.0 0.016 w w/ c operating and storage junction temperature range t j , t stg ? 55 to 150 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 3.5 c/w thermal resistance, junction ? to ? ambient r ja 62.5 c/w maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ordering information mjf44h11 to ? 220 fullpack isolated to ? 220 case 221d style 2 50 units/rail 3 1 2 preferred devices are recommended choices for future use and best overall value. silicon power transistors 10 amperes 80 volts, 36 watts mjf45h11 50 units/rail http://onsemi.com MJF45H11G 50 units/rail mjf44h11g to ? 220 fullpack (pb ? free) 50 units/rail to ? 220 fullpack to ? 220 fullpack (pb ? free) f4xh11 = specific device code x = 4 or 5 g=pb ? free package a = assembly location y = year ww = work week f4xh11g ayww marking diagram
mjf44h11 (npn), mjf45h11 (pnp) http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter sustaining voltage (i c = 30 ma, i b = 0) v ceo(sus) 80 ? ? vdc collector cutoff current (v ce = rated v ceo , v be = 0) i ces ? ? 1.0 a emitter cutoff current (v eb = 5 vdc) i ebo ? ? 10 a on characteristics collector ? emitter saturation voltage (i c = 8 adc, i b = 0.4 adc) v ce(sat) ? ? 1.0 vdc base ? emitter saturation voltage (i c = 8 adc, i b = 0.8 adc) v be(sat) ? ? 1.5 vdc dc current gain (v ce = 1 vdc, i c = 2 adc) h fe 60 ? ? ? dc current gain (v ce = 1 vdc, i c = 4 adc) 40 ? ? dynamic characteristics collector capacitance (v cb = 10 vdc, f test = 1 mhz) mjf44h11 mjf45h11 c cb ? ? 130 230 ? ? pf gain bandwidth product (i c = 0.5 adc, v ce = 10 vdc, f = 20 mhz) mjf44h11 mjf45h11 f t ? ? 50 40 ? ? mhz switching times delay and rise times (i c = 5 adc, i b1 = 0.5 adc) mjf44h11 mjf45h11 t d + t r ? ? 300 135 ? ? ns storage time (i c = 5 adc, i b1 = i b2 = 0.5 adc) mjf44h11 mjf45h11 t s ? ? 500 500 ? ? ns fall time (i c = 5 adc, i b1 = i b2 = 0.5 adc) mjf44h11 mjf45h11 t f ? ? 140 100 ? ? ns figure 1. thermal response t, time (ms) 0.01 0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k 0.1 0.5 0.2 1.0 0.2 0.1 0.05 r(t), transient thermal z jc(t) = r(t) r jc r jc = 1.56 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 single pulse resistance (normalized) 0.5 d = 0.5 0.05 0.3 0.7 0.07 0.03 0.02 0.02 100 200 0.1 0.02 0.01
mjf44h11 (npn), mjf45h11 (pnp) http://onsemi.com 3 figure 2. maximum rated forward bias safe operating area 100 1.0 v ce , collector-emitter voltage (volts) 5.0 10 t c 70 c duty cycle 50% i c , collector current (amps) 2.0 3.0 20 30 50 100 1.0 7.0 mjf44h11/mjf45h11 70 1.0 s dc 0.1 0.2 0.3 0.5 2.0 3.0 5.0 10 20 30 50 10 s 100 s 1.0 ms there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 2 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 1. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. figure 3. power derating 0 t, temperature ( c) 0 40 60 100 120 160 40 t c 20 60 p d , power dissipation (watts) 0 2.0 t a 1.0 3.0 80 140 t c t a 20
mjf44h11 (npn), mjf45h11 (pnp) http://onsemi.com 4 i c , collector current (amps) i c , collector current (amps) i c , collector current (amps) h fe , dc current gain v ce = 4 v t j = 125 c 25 c -40 c 1000 0.1 figure 4. mjf44h11 dc current gain 10 110 100 figure 5. mjf45h11 dc current gain figure 6. mjf44h11 current gain versus temperature figure 7. mjf45h11 current gain versus temperature i c /i b = 10 t j = 25 c 0.1 figure 8. mjf44h11 on ? voltages i c , collector current (amps) 1 0.8 saturation voltage (volts) 1.2 0.4 0 0.6 0.2 110 t j = 25 c figure 9. mjf45h11 on ? voltages v ce = 1 v i c /i b = 10 t j = 25 c 0.1 i c , collector current (amps) 1 0.8 saturation voltage (volts) 1.2 0.4 0 0.6 0.2 110 h fe , dc current gain 1000 0.1 10 110 100 v ce = 1 v i c , collector current (amps) h fe , dc current gain v ce = 4 v 1000 0.1 10 110 100 t j = 25 c 1 v t j = 125 c 25 c -40 c h fe , dc current gain 1000 0.1 10 110 100 v ce = 1 v v be(sat) v ce(sat) v be(sat) v ce(sat)
mjf44h11 (npn), mjf45h11 (pnp) http://onsemi.com 5 package dimensions to ? 220 fullpak case 221d ? 03 issue j style 2: pin 1. base 2. collector 3. emitter dim a min max min max millimeters 0.617 0.635 15.67 16.12 inches b 0.392 0.419 9.96 10.63 c 0.177 0.193 4.50 4.90 d 0.024 0.039 0.60 1.00 f 0.116 0.129 2.95 3.28 g 0.100 bsc 2.54 bsc h 0.118 0.135 3.00 3.43 j 0.018 0.025 0.45 0.63 k 0.503 0.541 12.78 13.73 l 0.048 0.058 1.23 1.47 n 0.200 bsc 5.08 bsc q 0.122 0.138 3.10 3.50 r 0.099 0.117 2.51 2.96 s 0.092 0.113 2.34 2.87 u 0.239 0.271 6.06 6.88 ? b ? ? y ? g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y seating plane ? t ? u c s j r notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. 221d-01 thru 221d-02 obsolete, new standard 221d-03. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 mjf44h11/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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